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1

Stress Evolution During Nanoindentation in Open TSVs

Papaleo, Santo, Zisser, Wolfhard H., Singulani, Anderson P., Ceric, Hajdin, Selberherr, Siegfried

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2016

Language:

english

File:

PDF, 671 KB

english, 2016

2

[IEEE 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Marina Bay Sands, Singapore (2014.6.30-2014.7.4)] Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Electromigration reliability of open TSV structures

Zisser, Wolfhard H., Ceric, Hajdin, Weinbub, Josef, Selberherr, Siegfried

Year:

2014

Language:

english

File:

PDF, 782 KB

english, 2014

3

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Predictive and efficient modeling of hot-carrier degradation in nLDMOS devices

Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Rupp, Karl, Bina, Markus, Enichlmair, Hubert, Park, Jong-Mun, Ceric, Hajdin, Grasser, Tibor

Year:

2015

Language:

english

File:

PDF, 1.23 MB

english, 2015

4

Interconnect reliability dependence on fast diffusivity paths

Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 903 KB

english, 2012

5

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

Starkov, Ivan, Ceric, Hajdin, Tyaginov, Stanislav, Grasser, Tibor, Enichlmair, Hubert, Park, Jong-Mun, Jungemann, Christoph

Year:

2011

Language:

english

File:

PDF, 3.21 MB

english, 2011

6

[IEEE 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) - Bologna, Italy (2015.1.26-2015.1.28)] EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme

Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Enichlmair, Hubert, Park, Jong-Mun, Ceric, Hajdin, Grasser, Tibor

Year:

2015

Language:

english

File:

PDF, 574 KB

english, 2015

7

[IEEE 2014 IEEE 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Marina Bay Sands, Singapore (2014.6.30-2014.7.4)] Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Electromigration reliability of solder bumps

Ceric, Hajdin, Selberherr, Siegfried

Year:

2014

Language:

english

File:

PDF, 1.19 MB

english, 2014

8

Three-dimensional simulation of sacrificial etching

Johann Cervenka, Hajdin Ceric, Siegfried Selberherr

Journal:

Microsystem Technologies

Year:

2008

Language:

english

File:

PDF, 362 KB

english, 2008

9

Simulative prediction of the resistance change due to electromigration induced void evolution

Hajdin Ceric, Siegfried Selberherr

Journal:

Microelectronics Reliability

Year:

2002

File:

PDF, 758 KB

2002

10

[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Disparate tendency of stress evolution of thin and thick electroplated Cu films at room temperature

Huang, Rui, Robl, Werner, Dehm, Gerhard, Ceric, Hajdin, Detzel, Thomas

Year:

2010

Language:

english

File:

PDF, 2.12 MB

english, 2010

11

[IEEE 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) - Madonna di Campiglio, Italy (2011.07.3-2011.07.7)] 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics - Analysis of worst-case hot-carrier conditions for n-type MOSFET

Starkov, Ivan, Ceric, Hajdin, Tyaginov, Stanislav, Grasser, Tibor

Year:

2011

Language:

english

File:

PDF, 1.49 MB

english, 2011

12

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Rupp, Karl, Bina, Markus, Enichlmair, Hubert, Park, Jong-Mun, Minixhofer, Rainer, Ceric, Hajdin, Grasser, Tibor

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.10 MB

english, 2015

13

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Modeling of stress evolution of electroplated Cu films during self-annealing

Huang, Rui, Robl, Werner, Detzel, Thomas, Ceric, Hajdin

Year:

2010

Language:

english

File:

PDF, 2.13 MB

english, 2010

14

SPIE Proceedings [SPIE Microtechnologies for the New Millennium 2005 - Sevilla, Spain (Monday 9 May 2005)] VLSI Circuits and Systems II - Transient electro-thermal investigations of interconnect structures exposed to mechanical stress

Holzer, Stefan, Hollauer, Christian, Ceric, Hajdin, Wagner, Stephan, Langer, Erasmus, Grasser, Tibor, Selberherr, Siegfried, Lopez, Jose F., Fernandez, Francisco V., Lopez-Villegas, Jose Maria, de la

Year:

2005

Language:

english

File:

PDF, 209 KB

english, 2005

15

[IEEE 2009 17th IFIP International Conference on Very Large Scale Integration (VLSI-SoC) - Florianopolis, Brazil (2009.10.12-2009.10.14)] 2009 17th IFIP International Conference on Very Large Scale Integration (VLSI-SoC) - Electromigration failure development in modern dual-damascene interconnects

Orio, Roberto Lacerda de, Ceric, Hajdin, Cervenka, Johann, Selberherr, Siegfried

Year:

2009

Language:

english

File:

PDF, 299 KB

english, 2009

16

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tyaginov, Stanislav, Starkov, Ivan, Triebl, Oliver, Ceric, Hajdin, Grasser, Tibor, Enichlmair, Hubert, Park, Jong-Mun, Jungemann, Christoph

Year:

2011

Language:

english

File:

PDF, 350 KB

english, 2011

17

ECS Transactions [ECS 26th Symposium on Microelectronics Technology and Devices (SBMicro 2011) - Joao Pessoa, Brazil (August 30 - September 2, 2011)] - Modeling Electromigration Lifetimes of Copper Interconnects

De Orio, Roberto L., Ceric, Hajdin, Selberherr, Siegfried

Year:

2011

Language:

english

File:

PDF, 1.08 MB

english, 2011

18

[ECS 23rd Symposium on Microelectronics Technology and Devices - Gramado, Brazil (September 1 - September 4, 2008)] ECS Transactions - Analysis of Electromigration in Dual-Damascene Interconnect Structures

Lacerda de Orio, Roberto, Carniello, Sara, Ceric, Hajdin, Selberherr, Siegfried

Year:

2008

Language:

english

File:

PDF, 244 KB

english, 2008

19

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Copper Microstructure Impact on Evolution of Electromigration Induced Voids

Ceric, Hajdin, de Orio, Roberto Lacerda, Cervenka, Johann, Selberherr, Siegfried

Year:

2009

Language:

english

File:

PDF, 542 KB

english, 2009

20

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Analysis of electromigration in redundant vias

Lacerda de Orio, Roberto, Ceric, Hajdin, Carniello, Sara, Selberherr, Siegfried

Year:

2008

Language:

english

File:

PDF, 893 KB

english, 2008

21

Accurate Extraction of MOSFET Unstressed Interface State Spatial Distribution from Charge Pumping Measurements

Starkov, Ivan, Tyaginov, Stanislav, Enichlmair, Hubert, Park, Jong Mun, Ceric, Hajdin, Grasser, Tibor

Journal:

Solid State Phenomena

Year:

2011

Language:

english

File:

PDF, 594 KB

english, 2011

22

[IEEE 2016 IEEE 66th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2016.5.31-2016.6.3)] 2016 IEEE 66th Electronic Components and Technology Conference (ECTC) - Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall

Papaleo, Santo, Rovitto, Marco, Ceric, Hajdin

Year:

2016

Language:

english

File:

PDF, 376 KB

english, 2016

23

[IEEE 2011 24th IEEE Canadian Conference on Electrical and Computer Engineering (CCECE) - Niagara Falls, ON, Canada (2011.05.8-2011.05.11)] 2011 24th Canadian Conference on Electrical and Computer Engineering(CCECE) - A simulator for local anodic oxidation of silicon surfaces

Filipovic, Lado, Ceric, Hajdin, Cervenka, Johann, Selberherr, Siegfried

Year:

2011

Language:

english

File:

PDF, 262 KB

english, 2011

24

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Strain-induced anisotropy of electromigration in copper interconnect

de Orio, Roberto Lacerda, Ceric, Hajdin, Selberherr, Siegfried

Year:

2007

Language:

english

File:

PDF, 137 KB

english, 2007

25

Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress

Roberto Lacerda de Orio, Hajdin Ceric, Siegfried Selberherr

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 308 KB

english, 2008

26

SPIE Proceedings [SPIE Microtechnologies for the New Millennium - Maspalomas, Gran Canaria, Spain (Wednesday 2 May 2007)] Smart Sensors, Actuators, and MEMS III - Three-dimensional simulation of sacrificial etching

Cervenka, Johann, Becker, Thomas, Cané, Carles, Ceric, Hajdin, Selberherr, Siegfried, Barker, N. Scott

Year:

2007

Language:

english

File:

PDF, 674 KB

english, 2007

27

[ECS 24th Symposium on Microelectronics Technology and Devices - Natal, Brazil (August 31 - September 3, 2009)] ECS Transactions - The Effect of Microstructure on Electromigration-Induced Failure Development

Lacerda de Orio, Roberto, Ceric, Hajdin, Cervenka, Johann, Selberherr, Siegfried

Year:

2009

Language:

english

File:

PDF, 498 KB

english, 2009

28

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution

de Orio, Roberto Lacerda, Ceric, Hajdin, Cervenka, Johann, Selberherr, Siegfried

Year:

2009

Language:

english

File:

PDF, 551 KB

english, 2009

29

Optimization of the Perfectly Matched Layer for the Finite-Element Time-Domain Method

Movahhedi, Masoud, Abdipour, Abdolali, Ceric, Hajdin, Sheikholeslami, Alireza, Selberherr, Siegfried

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2007

Language:

english

File:

PDF, 208 KB

english, 2007

30

[IEEE 2006 European Microwave Conference - Manchester, UK (2006.09.10-2006.09.15)] 2006 European Microwave Conference - A Finite Element Time-Domain Algorithm Based on the Alternating-Direction Implicit Method

Movahhedi, Masoud, Nentschev, Alexandre, Ceric, Hajdin, Abdipour, Abdolali, Selberherr, Siegfried

Year:

2006

Language:

english

File:

PDF, 130 KB

english, 2006

31

[IEEE 2016 IEEE 66th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2016.5.31-2016.6.3)] 2016 IEEE 66th Electronic Components and Technology Conference (ECTC) - Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper through Silicon Vias

Rovitto, Marco, Ceric, Hajdin

Year:

2016

Language:

english

File:

PDF, 390 KB

english, 2016

32

The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices

Sharma, Prateek, Tyaginov, Stanislav, Jech, Markus, Wimmer, Yannick, Rudolf, Florian, Enichlmair, Hubert, Park, Jong-Mun, Ceric, Hajdin, Grasser, Tibor

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 1.68 MB

english, 2016

33

[IEEE 2015 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2015.10.11-2015.10.15)] 2015 IEEE International Integrated Reliability Workshop (IIRW) - Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTs

Grill, A., Rzepa, G., Lagger, P., Ostermaier, C., Ceric, Hajdin, Grasser, T.

Year:

2015

Language:

english

File:

PDF, 1.74 MB

english, 2015

34

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Analysis of microstructure impact on electromigration

Ceric, Hajdin, Lacerda de Orio, Roberto, Cervenka, Johann, Selberherr, Siegfried

Year:

2008

Language:

english

File:

PDF, 880 KB

english, 2008

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